Nitride HEMTs VS Arsenides: the Ultimate Battle?
نویسندگان
چکیده
منابع مشابه
High-power GaN HEMTs battle for vacuum-tube territory
The market for millimeter-wave power amplifiers includes applications in military, commercial and consumer sectors. The armed forces use the devices in transmitters for the detection of small targets and target imaging, in radar equipment, communications and smart weapons systems. In the commercial sector the amplifiers are widely used in high-data-rate communication systems such as digital rad...
متن کاملApps vs. Open Web: The Battle of the Decade
Today, both desktop and mobile software systems are usually built to leverage resources available on the World Wide Web. However, in recent years desktop and mobile software have evolved in different directions. On desktop computers, the most popular application for accessing content and applications on the Web is the web browser. In mobile devices, in contrast, the majority of web content is c...
متن کاملThe Ultimate Solution to the Quantum Battle of the Sexes game
We present the unique solution to the Quantum Battle of the Sexes game. We show the best result which can be reached when the game is played according to Marinatto and Weber’s scheme. The result which we put forward does not surrender the criticism of previous works on the same topic. PACS numbers: 03.67.-a, 02.50.Le The Ultimate Solution to the Quantum Battle of the Sexes game 2
متن کاملThe Uphill Battle of Ant Programming Vs. Genetic Programming
Ant programming has been proposed as an alternative to Genetic Programming (GP) for the automated production of computer programs. Generalized Ant Programming (GAP) – an automated programming technique derived from principles of swarm intelligence – has shown promise in solving symbolic regression and other hard problems. Enhanced Generalized Ant Programming (EGAP) has improved upon the perform...
متن کاملGallium Nitride on Silicon HEMTs for Wireless Infrastructure Applications, Thermal Design and Performance
GaN HEMTs are being touted as the next generation microwave power transistor. Many research groups have reported outstanding DC and RF results on small periphery devices. However, the data on larger devices is somewhat limited. This paper will present results on large periphery devices (18 mm total gate width). Results from DC, RF and Linearity measurements will be presented. In addition a deta...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
سال: 2015
ISSN: 1609-3577
DOI: 10.17073/1609-3577-2015-1-16-22